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| 20V P-Channel Power MOSFET General Description The AAT8307 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechTM's proprietary ultrahigh density Trench technology, and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the area of a TSOP6 package. AAT8307 Features * * * VDS(MAX) = -20V ID(MAX) 1 = -6.0A @ 25C Low RDS(ON): * 35 m @ VGS = -4.5V * 60 m @ VGS = -2.5V TSOPJW-8 Package Applications * * * * Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Load Switches D 8 Preliminary Information Top View D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value -20 12 6.0 4.8 32 -1.9 2.1 1.3 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25C TA = 70C W C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RJA RJA2 RJF Description Junction-to-Ambient steady state Junction-to-Ambient t<5 seconds Junction-to-Foot 1 1 1 Typ 90 48 31 Max 110 59 37 Units C/W C/W C/W 8307.2003.06.0.62 1 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions Min -20 27 46 -32 -0.6 100 -1 -5 12 14 2.3 5.5 10 37 36 52 -1.2 -1.9 35 60 AAT8307 Typ Max Units V m A V nA A S DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250A VGS=-4.5V, ID=-6.0A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=-4.6A ID(ON) On-State Drain Current 2 VGS=-4.5V, VDS=-5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250A IGSS Gate-Body Leakage Current VGS=12V, VDS=0V VGS=0V, VDS=-20V IDSS Drain Source Leakage Current VGS=0V, VDS=-16V, TJ=70C 3 gfs Forward Transconductance 2 VDS=-5V, ID=-6.0A Dynamic Characteristics 3 QG Total Gate Charge VDS=-15V, RD=2.5, VGS=-4.5V QGS Gate-Source Charge VDS=-15V, RD=2.5, VGS=-4.5V QGD Gate-Drain Charge VDS=-15V, RD=2.5, VGS=-4.5V tD(ON) Turn-ON Delay VDD=-15V, VGS=-4.5V, RD=2.5, tR Turn-ON Rise Time VDD=-15V, VGS=-4.5V, RD=2.5, tD(OFF) Turn-OFF Delay VDD=-15V, VGS=-4.5V, RD=2.5, tF Turn-OFF Fall Time VDD=-15V, VGS=-4.5V, RD=2.5, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=-6.0A IS Continuous Diode Current 1 nC RG=6 RG=6 RG=6 RG=6 ns V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design, however RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 s Note 3: Guaranteed by design. Not subject to production testing. 2 8307.2003.06.0.62 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 32 AAT8307 Transfer Characteristics 32 5V 4.5V 4V 3.5V VD=VG 25C -55C 125C 24 24 3V IDS (A) ID (A) 2V 2.5V 1.5V 0 0 1 2 3 4 16 16 8 8 0 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 60 50 40 30 20 10 0 0 2 4 6 8 10 12 120 On-Resistance vs. Gate to Source Voltage ID = 6.5A VGS = 2.5 V RDS(ON) (m) 100 80 60 40 20 0 0 1 2 3 4 5 RDS(ON) (m) VGS = 4.5 V ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.4 1.3 0.5 Threshold Voltage ID = 250A Normalized RDS(ON) VGS(th) Variance (V) VGS = 4.5V ID = 6.5A 0.4 0.3 0.2 0.1 0 -0.1 -0.2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -0.3 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 8307.2003.06.0.62 3 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 5 4 3 AAT8307 Source-Drain Diode Forward Voltage 100 VD=15V ID=6.5A 10 TJ = 150C TJ = 25C VGS (V) 2 1 0 0 3 6 9 12 15 IS (A) 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 QG, Charge (nC) VSD (V) Capacitance 2000 1600 Single Pulse Power, Junction to Ambient 60 50 Capacitance (pF) 1200 800 Ciss Power (W) 40 30 20 10 Coss 400 Crss 0 0 5 10 15 20 0 0.001 0.1 10 1000 VDS (V) Time (s) Transient Thermal Response, Junction to Ambient Normalized Effective Transient Thermal Impedance 10 1 .5 0.1 .2 .1 .02 .01 0.001 Single Pulse 0.01 0.1 1 10 100 1000 0.01 0.0001 Time (s) 4 8307.2003.06.0.62 20V P-Channel Power MOSFET Ordering Information Package TSOPJW-8 Marking1 ICXYY Part Number (Tape and Reel) AAT8307ITS-T1 AAT8307 Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code. Package Information TSOPJW-8 0.325 0.075 2.40 0.10 0.65 BSC 0.65 BSC 0.65 BSC 2.85 0.20 7 3.025 0.075 0.9625 0.0375 1.0175 0.0925 0.04 REF 0.055 0.045 0.010 0.15 0.05 0.45 0.15 2.75 0.25 All dimensions in millimeters. 8307.2003.06.0.62 5 20V P-Channel Power MOSFET AAT8307 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8307.2003.06.0.62 |
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